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DISCRETE SEMICONDUCTORS DATA SHEET PHC21025 Complementary enhancement mode MOS transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES * High-speed switching * No secondary breakdown * Very low on-resistance. APPLICATIONS * Motor and actuator driver * Power management * Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. CAUTION 1 handbook, halfpage PHC21025 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1 d1 d1 5 d2 d2 8 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 4 s1 g1 s2 g2 MAM118 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL Per channel VDS drain-source voltage (DC) N-channel P-channel VSD source-drain diode forward voltage N-channel P-channel VGSO VGSth gate-source voltage (DC) gate-source threshold voltage N-channel P-channel ID drain current (DC) N-channel P-channel RDSon drain-source on-state resistance N-channel P-channel Ptot 1997 Jun 20 total power dissipation VGS = 10 V; ID = 2.2 A VGS = -10 V; ID = -1 A Ts = 80 C 2 - - - 0.1 0.25 2 W - - 3.5 -2.3 A A VDS = VGS; ID = 1 mA VDS = VGS ; ID = -1 mA 1 -1 2.8 -2.8 IS = 1.25 A IS = -1.25 A open drain - - - 1.2 -1.6 20 V V V V V V - - 30 -30 V V PARAMETER CONDITIONS MIN. MAX. UNIT Philips Semiconductors Product specification Complementary enhancement mode MOS transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per channel VDS drain-source voltage (DC) N-channel P-channel VGSO ID gate-source voltage (DC) drain current (DC) N-channel P-channel IDM peak drain current N-channel P-channel Ptot total power dissipation Ts = 80 C; note 2 Tamb = 25 C; note 3 Tamb = 25 C; note 4 Tamb = 25 C; note 5 Tstg Tj IS storage temperature operating junction temperature Ts 80 C - - note 1 - - note 1 - - - - - - -65 - open drain Ts 80 C - - - - - PARAMETER CONDITIONS MIN. PHC21025 MAX. UNIT 30 -30 20 3.5 -2.3 14 -10 2 2 1 1.3 +150 150 V V V A A A A W W W W C C Source-drain diode source current (DC) N-channel P-channel ISM peak pulsed source current N-channel P-channel Notes 1. Pulse width and duty cycle limited by maximum junction temperature. 2. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. 3. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 5. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 1.5 -1.25 6 -5 A A A A 1997 Jun 20 3 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 handbook, halfpage 2.5 MLB836 P tot (W) 2 10 handbook, halfpage MLB833 - 1 2.0 ID (A) 10 (1) tp = 10 s 1.5 1 1.0 1 ms P = T tp DC 0.1 s 0.5 10 1 tp 0 0 50 100 150 T s ( C) o t T 200 10 2 10 1 1 10 V DS (V) 10 2 = 0.01. Ts = 80 C. (1) RDSon limitation. Fig.2 Power derating curve. Fig.3 SOAR; N-channel. 10 2 handbook, halfpage ID (A) 10 (1) MBE155 tp = 10 s 1 P 10 1 1 ms = T tp DC 0.1 s tp T 10 2 1 t 10 1 10 V DS (V) 10 2 = 0.01. Ts = 80 C. (1) RDSon limitation. Fig.4 SOAR; P-channel. 1997 Jun 20 4 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 35 PHC21025 UNIT K/W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per channel V(BR)DSS drain-source breakdown voltage N-channel P-channel VGSth gate-source threshold voltage N-channel P-channel IDSS drain-source leakage current N-channel P-channel IGSS gate leakage current N-channel P-channel IDon on-state drain current N-channel P-channel RDSon drain-source on-state resistance N-channel P-channel yfs forward transfer admittance N-channel P-channel Ciss input capacitance N-channel P-channel Coss output capacitance N-channel P-channel VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 140 140 - - pF pF VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 250 250 - - pF pF VDS = 20 V; ID = 2.2 A VDS = -20 V; ID = -1 A 2 1 4.5 2 - - S S VGS = 4.5 V; ID = 1 A VGS = 10 V; ID = 2.2 A VGS = -4.5 V; ID = - 0.5 A VGS = -10 V; ID = -1 A - - - - 0.11 0.08 0.33 0.22 0.2 0.1 0.4 0.25 VGS = 10 V; VDS = 1 V VGS = 4.5 V; VDS = 5 V VGS = -10 V; VDS = -1 V VGS = -4.5 V; VDS = -5 V 3.5 2 -2.3 -1 - - - - - - - - A A A A VGS = 0; VDS = 24 V VGS = 0; VDS = -24 V VGS = 20 V; VDS = 0 - - - - 100 100 nA nA - - - - 100 -100 nA nA VGS = VDS ; ID = 1 mA VGS = VDS ; ID = -1 mA 1 -1 - - 2.8 -2.8 V V VGS = 0; ID = 10 A VGS = 0; ID = -10 A 30 -30 - - - - V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 1997 Jun 20 5 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors SYMBOL Crss PARAMETER reverse transfer capacitance N-channel P-channel QG total gate charge N-channel P-channel QGS gate-source charge N-channel P-channel QGD gate-drain charge N-channel P-channel Switching times ton turn-on time N-channel P-channel toff turn-off time N-channel P-channel Source-drain diode VSD source-drain diode forward voltage N-channel P-channel trr reverse recovery time N-channel P-channel IS = 1.25 A; di/dt = 100 A/s IS = -1.25 A; di/dt = 100 A/s - - 35 VGD = 0; IS = 1.25 A VGD = 0; IS = -1.25 A - - - - VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; RL = 20 VGS = -10 to 0 V; VDD = -20 V; ID = -1 A; RL = 20 - - 25 50 VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; RL = 20 VGS = 0 to -10 V; VDD = -20 V; ID = -1 A; RL = 20 - - 15 20 VGS = 10 V; VDS = 15 V; ID = 2.3 A - VGS = 10 V; VDS = 15 V; ID = 2.3 A - 1 1 VGS = 10 V; VDS = 15 V; ID = 2.3 A - 10 10 VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 50 50 CONDITIONS MIN. PHC21025 TYP. MAX. UNIT - - 30 25 - - - - pF pF nC nC nC nC nC nC VGS = -10 V; VDS = -15 V; ID = -2.3 A - VGS = -10 V; VDS = -15 V; ID = -2.3 A - 2.5 3 VGS = -10 V; VDS = -15 V; ID = -2.3 A - 40 80 ns ns 140 140 ns ns 1.2 -1.6 100 200 V V ns ns 150 1997 Jun 20 6 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE137 handbook, halfpage 600 MBE144 handbook, halfpage 600 C (pF) 400 C (pF) 400 C iss 200 Coss C rss 0 0 10 20 V DS (V) 30 0 0 10 20 200 C iss Coss C rss V DS (V) 30 VGS = 0. Tj = 25 C. VGS = 0. Tj = 25 C. Fig.5 Capacitance as a function of drain-source voltage; N-channel; typical values. Fig.6 Capacitance as a function of drain source voltage; P-channel; typical values. handbook, halfpage MBE142 V handbook, halfpage GS = ID (A) 12 5V 10 V 6V 16 10 ID (A) 8 MBE154 VGS = 10 V 7.5 V 6V 6 8 4.5 V 4 4V 4 3.5 V 3V 0 0 2 4 6 8 10 V DS (V) 12 0 0 2 4 6 8 2 5V 4.5 V 4V 3.5 V 3V 2.5 V 10 V DS (V) 12 Tj = 25 C. Tj = 25 C. Fig.7 Output characteristics; typical values; N-channel. Fig.8 Output characteristics; typical values; P-channel. 1997 Jun 20 7 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 MBE141 MBE157 handbook, halfpage 16 handbook, halfpage 10 ID (A) 12 ID (A) 8 6 8 4 4 2 0 0 2 4 6V 8 GS (V) 0 0 2 4 6 V GS (V) 8 VDS = 10 V. Tj = 25 C. VDS = -10 V. Tj = 25 C. Fig.9 Transfer characteristic; typical values; N-channel. Fig.10 Transfer characteristic; typical values; P-channel. handbook, halfpage 10 MBE136 VGS (V) handbook, halfpage 10 VGS (V) 8 MBE145 8 6 6 4 4 2 2 0 0 2 4 6 Q (nC) 8 g 0 0 2 4 6 8 10 Q g (nC) VDD = 15 V. ID = 3.5 A. VDD = -15 V. ID = -2.3 A. Fig.11 Gate-source voltage as a function of total gate charge; N-channel. Fig.12 Gate-source voltage as a function of total gate charge; P-channel. 1997 Jun 20 8 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 handbook, halfpage 6 MBE159 handbook, halfpage 6 MBE158 IS (A) IS (A) 4 4 (1) (2) (3) (1) (2) (3) 2 2 0 0 0.5 1 V SD (V) 1.5 0 0 0.5 1 1.5 V SD (V) VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C. 2 VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C. Fig.13 Source current as a function of source-drain diode forward voltage; N-channel. Fig.14 Source current as a function of source-drain diode forward voltage; P-channel. 104 handbook, halfpage RDSon (m) (1)(2)(3)(4)(5)(6) MDA217 104 handbook, halfpage MDA165 RDSon (m) (1) (2)(3) (4) (5) 103 103 102 10 0 2 4 6 8 10 VGS (V) 102 0 -2 -4 -6 -8 -10 VGS (V) VDS ID x RDSon; Tj = 25 C. (1) ID = 0.1 A. (2) ID = 0.5 A. (3) ID = 1 A. (4) ID = 2.2 A. (5) ID = 3.5 A. (6) ID = 7 A. -VDS -ID x RDSon; Tj = 25 C. (1) ID = -0.1 A. (2) ID = -0.5 A. (3) ID = -1 A. (4) ID = -2.3 A. (5) ID = -4.5 A. Fig.15 Drain-source on-state resistance as a function of gate-source voltage; typical values; N-channel. Fig.16 Drain-source on-state resistance as a function of gate-source voltage; typical values; P-channel. 1997 Jun 20 9 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 handbook, halfpage 1.2 MBE138 handbook, halfpage 1.8 MBE139 k 1.1 k 1.6 (1) 1.0 1.4 (2) 0.9 1.2 0.8 1.0 0.7 0.8 0.6 50 0 50 100 T j ( C) V GSth at T j k = ------------------------------------V GSth at 25C Typical VGSth at ID = 1 mA; VDS =VGS = VGSth. o 0.6 150 50 0 50 100 R DSon at T j k = ---------------------------------------R DSon at 25 C Typical RDSon at: (1) ID = 2.2 A; VGS = 10 V. (2) ID = 1 A; VGS = 4.5 V. T j ( C) o 150 Fig.17 Temperature coefficient of gate-source threshold voltage; N and P-channels. Fig.18 Temperature coefficient of drain-source on-resistance; N-channel. handbook, halfpage 1.8 MBE146 k 1.6 (1) (2) 1.4 1.2 1.0 0.8 0.6 50 0 50 100 R DSon at T j k = ---------------------------------------R DSon at 25 C Typical RDSon at: (1) ID = -1 A; VGS = -10 V. (2) ID = -0.5 A; VGS = -4.5 V. T j ( C) o 150 Fig.19 Temperature coefficient of drain-source on-resistance; P-channel. 1997 Jun 20 10 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PHC21025 10 2 MBE152 R th j-s (K/W) = 0.75 0.5 10 0.33 0.2 0.1 0.05 1 0.02 0.01 0 P = T tp tp T t 10 1 10 6 10 5 10 4 10 3 10 2 10 1 t p (s) 1 Fig.20 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1997 Jun 20 11 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm PHC21025 SOT96-1 D E A X c y HE vMA Z 8 5 Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3 0.010 0.057 0.069 0.004 0.049 0.019 0.0100 0.014 0.0075 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 0.028 0.004 0.012 8 0o o Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION ISSUE DATE 95-02-04 97-05-22 1997 Jun 20 12 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PHC21025 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 20 13 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors NOTES PHC21025 1997 Jun 20 14 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors NOTES PHC21025 1997 Jun 20 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 137107/00/02/pp16 Date of release: 1997 Jun 20 Document order number: 9397 750 02509 |
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